GT10J312(Q)

GT10J312(Q)

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Manufacturer Part GT10J312(Q)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description IGBT 600V 10A 60W TO220SM
Category Discrete Semiconductor Products
Family Transistors - IGBTs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet GT10J312(Q) PDF

Availability

InStock 926,320
UnitPrice $ 0.00000

GT10J312(Q) Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

GT10J312(Q) Specifications

Type Description
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):600 V
Current - Collector (Ic) (Max):10 A
Current - Collector Pulsed (Icm):20 A
Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 10A
Power - Max:60 W
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:400ns/400ns
Test Condition:300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr):200 ns
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package:TO-220SM

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